to-220 parameter symbol value unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 7 v collector current i c 7.0 a base current i b 3.5 a total dissipation at p tot 40 w max. operating junction temperature t j 150 o c storage temperature t stg -55~15 0 o c KSC2334 description parameter symbol test conditions min. typ. max. unit collector cut-off current i ceo v cb =100v, i e =0 10 a emitter cut-off current i ebo v eb =5v, i c =0 10 a collector-emitter sustaining voltage v ceo i c =30ma, i b =0 100 v dc current gain h fe(1) v ce =5.0v, i c =0.5a 40 h fe(2) v ce =5.0v, i c =3.0a 40 240 h fe(3) v ce =5.0v, i c =5.0a 20 collector-emitter saturation voltage v ce(sat) i c =5.0a,i b =500ma 0.5 v base-emitter saturation voltage v be(sat) i c =5.0a,i b =500ma 1.5 v storage time t s i b1 = -i b2 = 0.5a r l = 10 0.5 s h fe(2) r: 40 ~ 80 o: 70 ~ 140 y: 120 ~ 240 npn epitaxial silicon transistor product specification high speed switching industrial use complement to ksa1010 electrical characteristics absolute maximum ratings( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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